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Faculty

Leonard P. Trombetta
Dr. Leonard P. Trombetta, IEEE Life Member
Professor, Director of Undergraduate Studies
Office Location W324 Engineering Building 2
Phone 713-743-4424
Fax 713-743-4444
Email ltrombetta [at] uh.edu
Publications
Education
BS Physics, Rensselaer Polytechnic Institute
PhD Physics, Lehigh University
Professional Experience
Army Research Laboratory, Fort Monmouth, NJ, 1981-1986
Faculty of UH Cullen College of Engineering - Now an associate Professor, 1986-Present
Research Interests

Solid state device physics. Characterization of MOS devices and materials. Characterization of metal-insulator-semiconductor (MIS) systems, particularly mechanisms of defect generation at the insulator-semiconductor interface, including the SiO2/Si system as well as SiO2/SiC and "high-K" insulators on Si for applications in advanced CMOS devices. Characterization of III-V semiconductors, including GaAs and AlGaAs, and GaN. Radiation response of MOS devices.

Selected Publications

"Nanogap Capacitors Used for Impedance Characterization of Living Cells," Padmaraj, D., W. Zagozdzon-Wosik, J.H. Miller, J. Charlson, and L. Trombetta, Proceedings "Integrated Nanosensors" of Material Research Soc., Vol. 952, 0952-F10-15, 2007.

"MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si", X. Yu, L. Shao, Q. Y. Chen, L. Trombetta, C. Wang, B. Dharmaiahgari, X. Wang, H. Chen, K. B. Ma, J. Liu, and W-K. Chu, Nuclear Instruments and Methods in Physics Research B, 249, pp. 414-416 (2006)

"The effects of nitrogen plasma on RIE-induced damage in GaN", Z. Mouffak, A. Bensaoula, and L. Trombetta, J. Appl. Phys., 95 (2), pp. 727-730 (2004)

"Effect of Photo-Assisted RIE Damage on GaN", Z. Mouffak, N. Medelci-Djezzar, C. Boney, A. Bensaoula, and L. Trombetta, MRS Internet J. Nitride Semicond. Res. 8, 6 (2003)

"Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth", Lin Shao, Phillip E. Thompson, Joe Bennett, Bhanu P. Dharmaragari, Len Trombetta, Xuemei Wang, Hui Chen, Hye-Won Seo, Quark Y. Chen, Jianui Liu, and Wei-Kan Chu, Appl. Phys. Lett. 83 (14), pp. 2823-2825 (2003)

"Defects Produced by Medium Energy Proton Bombardment of MOS Devices", P. M. Lenahan, T. D. Mishima, J. B. Jumper, T. N. Fogarty, M. Marrero, L. Cruz, S. Shojah-Ardalan, R. Dwivedi, R. Wilkins, L. P. Trombetta and C. Singh, 6th European Conference on Radiation Effects on Circuits and Systems (RADECS), Sept. 10 - 14, 2001, Grenoble, France

"Analysis of Charge Components Induced by Fowler-Nordheim Tunnel Injection in Silicon Oxides Prepared by Rapid Thermal Oxidation," Y. Roh, L. Trombetta, and J. Han, J. Electrochem. Soc. 142 (3), 1015 (1995)

"Interface Traps Induced by Hole Trapping in Metal-Oxide-Semiconductor Devices", Y. Roh, L. Trombetta, and D. J. DiMaria, J. Non-Crystalline Solids, 187, 165 (1995)

"The Influence of Sb Doping on the Growth and Electronic Properties of GaAs (100) and AlGaAs (100)," K. D. Jamison, H. C. Chen, A. Bensaoula, W. Lim, L. Trombetta, and A. Ignatiev, J. Vac. Sci. Technol. A7 (3), 606 (1989).