Faculty

Shin-Shem Steven Pei
Dr. Shin-Shem Steven Pei
Professor
N 308 Engineering Building 1
Houston, TX 77204-4005
Phone: 713-743-4433 | Fax: 713-743-4444
Email: spei [at] uh [dot] edu

Education: 

BS Physics, National Taiwan University, Taipei
PhD Solid State Physics, State University of New York, Stony Brook

Professional Experience: 

Professor of Electrical and Computer Engineering, 1994-Present
Professor of Physics, 1998-Present
Deputy Director, Center for Advanced Materials, 2005-Pesent
Executive Director, Southwest Public Safety Technology Center, 2005-Present
Associated Editor of IEEE Transactions on Electron Devices, 1987-1990
Head of the Materials and Processing Research Department/Heterostructure Materials and IC Department at AT&T Bell Laboratories, Murray Hill, NJ, 1986-1994

Research Interests: 

Graphene, nanowires and nanotubes grown by chemical vapor deposition (CVD) for biosensors, microwave devices and integrated circuits and other electronic applications.

Mid infrared type-II quantum cascade lasers based on MBE grown GaSb/InAs heterostructures for chemical sensing, countermeasures, and other optoelectronic applications.

Long wavelength quantum well infrared photodetectors (QWIPs) based on MBE and MOCVD grown GaAs/AlGaAs heterostructures for sensing applications.

High Electron Mobility Transistor (HEMT) and Heterojunction bipolar transistors (HBTs) based on MBE, CBE and MOCVD grown GaAs/AlGaAs and InGaAs/InAlAs heterostructures for high speed and high frequency communication applications.

Selected Publications: 

2002-PRESENT: NANOTUBE, NANOWIRE, GRAPHENE

“Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapour Deposition”, Yu QK; Jauregui LA; Wu W; Colby R; Tian JF; Su ZH; Cao HL; Liu ZH; Pandey D; Wei DG; Chung J; Peng P; Guisinger N; Stach EA; Bao JM; Pei SS, Chen YP, Featured on the cover of June issue of Nature Materials 10, 443–449 (May 8, 2011).

“Room-temperature Fano resonance tunable by chemical doping in few-layer graphene synthesized by chemical-vapor deposition”, Liu, ZH; Lu, XX; Peng, P; Wu, W; Pei, SS; Yu, QK; Bao, JM, arXiv:1004.4042v1 (Apr 23 2010), Physical Review B82 (15): 155435 (Oct 18 2010).

“Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition”, Wu, W; Yu, QK; Lian, J; Liu, ZH; Bao, JM; Pei, SS, Journal of Crystal growth, 312 (21): 3147-3150 (Oct 15 2010).

“Wafer-scale Synthesis of Graphene by Chemical Vapor Deposition and its Application in Gas Sensing”, Wu, W; Liu, ZH; Jauregui, LA; Yu, QK; Pillai, R; Cao, HL; Bao, JM; Chen, YP; Pei, SS, Sensors and Actuators B-Chemical, 150 (1): 296-300 (Sep 21 2010).

“Substrate Hybridization and Rippling of Graphene Evidenced by Near-Edge X-ray Absorption Fine Structure Spectroscopy”, Lee, V; Park, C; Jaye, C; Fischer, DA; Yu, QK; Wu, W; Liu, ZH; Pei, SS; Smith, C; Lysaght, P; Banerjee, S, Journal of Physical Chemistry letters, 1 (8): 1247-1253 (Apr 15 2010).

“Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization”, Cao, HL; Yu, QK; Jauregui, LA; Tian, J; Wu, W; Liu, Z; Jalilian, R; Benjamin, DK; Jiang, Z; Bao, J; Pei, SS; Chen, YP, Applied Physics Letters, 96 (12): 122106 (Mar 24 2010).

“Cross-sectional Transmission Electron Microscopy of Thin Graphite Films Grown by Chemical Vapor Deposition”, Colby, R; Yu, QK; Cao, HL; Pei, SS; Stach, EA; Chen, YP, Diamond and Related Materials, 19 (2-3): 143-146 (Feb-Mar 2010).

“Large Scale Graphene Films Synthesized on Metals and Transferred to Insulators for Electronic Applications”, Cao, HL; Yu, QK; Colby, R; Pandey, D; Park, CS; Lian, J; Zemlyanov, D; Childres, I; Drachev, V; Stach, EA; Hussain, M; Li, H; Pei, SS; Chen, YP, Journal of Applied Physics, 107 (4): 044310 (Feb 15 2010).

“Aligned Tungsten Oxide Nanowires on Tungsten (100) Substrates”, Yu, QK; Wu, W; Zhang, JM; Liu, BA; Pei, SS, Materials Letters, 63 (26): 2267-2269 (Oct 31 2009).

“Graphene Synthesis by Surface Segregation on Ni and Cu”, Yu, QK; Lian, J; Siriponglert, S; Li, H; Chen, YP; Pei, SS, arXiv:0804.1778v1 (Apr 10 2008) and “Graphene Segregated on Ni surfaces and Transferred to Insulators”, Yu, QK; Lian, J; Siriponglert, S; Li, H; Chen, YP; Pei, SS, Applied Physics Letters, 93 (11): 113103 (Sep 15 2008) and selected for Virtual Journal of Nanoscale Science and Technology, 18(13) arXiv:0804.1778v2 (Dec 9 2008).

“Horizontally-aligned growth of Cu5Si polycrystalline nanorods on Si”, Wu, W; Yu, QK; Zhang, JM; Lian, J; Liang, G; Ewing, RC; Pei SS, Applied Physics Letters, 92 (25): 253113 (Jun 23 2008).

“Mechanism of Horizontally Aligned Growth of Single-Wall Carbon Nanotubes on R-Plane Sapphire”, Q. Yu, G. Qin, H. Li, Z. Xia, Y. Nian, and S. S. Pei, Journal of Physical Chemistry B, 110 (45): 22676-22680 (Nov 16 2006).

2005-2006: ATOMIC FORCE MICROSCOPE

“Fabrication of Short and Thin Silicon Cantilever Tips for AFM with SOI Wafers”, Yu, QK; Qin, GT; Darne, C; Cai, CZ; Wosik, W; Pei, SS, Sensors and Actuators A-Physical, 126 (2): 369-374 (Feb 14 2006).

Technical Reports: 

“Fabrication of Single-crystalline Graphene Arrays”, Qingkai Yu, S. S. Pei, UH provisional patent (US Serial No. 61/391,866) filed on October 11, 2010.
“Fabrication of Short and Thin Silicon Cantilver Tips for AFM with SOI Wafers”, Qingkai Yu, S. S. Pei, Chengzhi Cai, Chi-Ming Yam, and Quoting Qin, US Patent Number 7,637,960 issued on Dec. 29, 2009.
(“Horizontally aligned growth of silicon carbide nanowires on sapphire”, Hao Li, Qingkai Yu and S. S. Pei, UH patent disclosure, 2005.)
(“Quality-of-Service (QoS) Supporting Mechanisms for Multimedia Streaming over Wireless Networks”, Nicolaos B. Karayiannis, Il Mo Jung, and S. S. Pei, UH provisional patent filed, 2005.)
(“Infrared Echelon-type Polarizing Beam Splitter”, Y. Chen and S. S. Pei, UH patent disclosure, 2000.)
“Method for Making Self-Electro-Optical Device and Devices Made Thereby (in situ IR photo-reflectance measurement technique for controlling the growth of Fabry-Perot resonance cavities)”, L. A. D’Asaro, S. S. Pei and J. M. Kuo, U. S. Patent Number 5,298,454 issued on Mar. 29, 1994.
“Planar FET-SEED Integrated Circuits”, L. A. D’Asaro, S. S. Pei, L. M. F. Chirovsky and T. K. Woodward, U. S. Patent Number 5,289,015 issued on Feb. 22, 1994.
“Planar Quantum Well Photodetector”, S. S. Pei and S. P. Hui, U. S. Patent Number 5,281,542 issued on Jan. 25, 1994.
"Planar Buried Quantum Well Photodetector”, S. S. Pei and S. P. Hui, U. S. Patent Number 5,223,704 issued on June 29, 1993.
“Fabrication of GaAs Integrated Circuits”, S. S. Pei, M. P. Iannuzzi, T.-H.-H. Voung, A. C. Beca, A. Lahav, C. L. Reynolds, Jr., and R. H. Burton, U. S. Patent Number 5,041,393 issued on Aug. 20, 1991.
“Josephson Junction Fabrication Method”, S. S. Pei and T. A. Fulton, U. S. Patent 4,470,190 issued on Sept. 11, 1984.