Wanda Zagozdzon-Wosik
Dr. Wanda Zagozdzon-Wosik
Associate Professor
Office Location: W316 Engineering Building 2
Phone: 713-743-4427 | Fax: 713-743-4444
Email: wwosik [at] uh [dot] edu


MS, Warsaw University of Technology, Electronics Department, Warsaw, Poland
PhD, Warsaw University of Technology, Electronics Department, Warsaw, Poland

Professional Experience: 

The Institute of Electron Technology CEMI (Research and Development Center for Semiconductors), Until 1986
Joined UH Cullen College of Engineering as a visiting professor, now an associate professor, 1986-Present

Research Interests: 

Microelectronics: Semiconductor Integrated Circuit Processing Technology and Electron Devices, Micro- and Nonoelectromechnical Systems (MEMS/NEMS), and BioMEMS for Biological Samples at Cellular/Subcellular Levels and Nanoparticles.

Selected Publications: 

C Darne, L Xie, W Zagozdzon-Wosik, H K. Schmidt, and J Wosik, Microwave properties of single-walled carbon nanotubes films below percolation threshold , Appl. Phys. Lett. 94, 233112, 2009.

D. Padmaraj, W. Zagozdzon-Wosik, L-M Xie, V. G. Hadjiev, P. Cherukuri and J. Wosik, Parallel and orthogonal E-field alignment of single-walled carbon nanotubes by ac dielectrophoresis, Nanotechnology, 20, 035201, 2009.

D. Padmaraj, W. Zagozdzon-Wosik, R. Pande, J.H. Miller, L-M Xie, J. Wosik, "Dielectrophoresis and Comsol Simulation of Cell Entrapment At Electrodes", Nanotechnology 2009, vol.1, pp. 460 - 463, ISBN: 978-1-4398-1782-7, 2009.

D. Padmaraj, W. Zagozdzon-Wosik, Lei-Ming Xie, D. Pijanowka, J.H. Miller, P. Grabiec, J. Wosik, BioMEMS for Mitochondria Medicine, Nanotechnology 2009, vol.1 , pp. 464 - 467, ISBN: 978-1-4398-1782-7, 2009.

C. Darne, L.-M. Xie, D. Padmaraj, P. Cherukuri W. Zagozdzon-Wosik, and J. Wosik, "Resonant and Broadband Microwave Permittivity Measurements of Single-walled Carbon Nanotubes," Nanotubes and Related Nanostructures, edited by Yoke Khin Yap, Mater. Res. Soc. Symp. Proc. Volume 1057E, 1057-II15-61 Warrendale, PA, 2008.

D. Padmaraj, W. Zagozdzon-Wosik, J. H. Miller, Joe Charlson, and L. Trombetta, "Nanogap Capacitors Used for Impedance Characterization of Living Cells", Proceedings "Integrated Nanosensors" of Material Research Soc., Vol. 952, 0952-F10-15, 2007.

W. Zagozdzon-Wosik, I. Rusakova, C. Darne,Z.-H. Zhang, P. van der Heide,and P. Majhi, Microstructure and Electrical Properties of Diborides after Rapid Thermal Annealing, Journal of Microscopy, 223, 3, 227-230, 2006.

Qingkai Yu, Guoting Qin, Chinmay Darne, Chengzhi Cai, Wanda Wosik, and Shin-Shem Pei, Fabrication of short and thin silicon cantilevers for AFM with SOI wafers, Sensors and Actuators, 126-2, 369, 2006.

W. Zagozdzon-Wosik, C. Darne, D. Radhakrishnan, I. Rusakova, P. van der Heide, Z.-H. Zhang, J. Bennett, L. Trombetta, P. Majhi, and D, Matron, "Applications of metallic borides for gate electrodes in CMOS integrated circuits, Rev. Adv. Mater. Sci. 8, Vol. 8, No. 2, pp. 185-194, 2004.

R. Ranjit, W. Zagozdzon-Wosik, I. Rusakova, P. van der Heide, Z.-H. Zhang, J. Bennett, and D. Marton. "Formation of contacts and integration with shallow junctions using diborides of Ti, Zr and Hf", Rev. Adv. Mater. Sci. 8, No. 2, pp. 176-184, 2004.

Zagozdzon-Wosik, W., R. Ranjit, I. Rusakova, P. van der Heide, Z. Zhang, and J. Bennett, "RTP of titanium boride for applications in from end processing", Proc. of IEEE 11th International Conf. on Advanced Thermal Proc. of Semiconductors, RTP 2003, Charlson, SC, pp. 209-213, Sept. 2003.

W. Zagozdzon-Wosik, R. Ranjit, D. B Ravindranath, Z. Zhang, J. Charlson, I. Rusakova, and P. van der Heide, L. Larson, J. Bennett, R. Tichy, and M. Beebe, "Conductive Borides Used for Junction Formation and Integration with Contacts in Deep 0.1µm MOSFETs", IEEE 19th International Conf. on Advanced Thermal Proc. of Semiconductors, RTP 2002, Vancouver, Canada, pp. 137-142, Sept. 2002.

W. Zagozdzon-Wosik, L. Shao, M. Menon, E. Arroyo-Cadtelazo, I. Rusakova, X. Wang, P. Van der Heide, J. Liu, W.K. Chu and J. Bennet, "Device and material issues related to integration of junctions with contacts in deep 0.1 µm MOSFETs, 9th Intern. Conf. On Advanced Thermal Processing of semiconductors, RTP 2001, Eds., DeWitt et al., pp. 82-86, 2001.

W. Zagozdzon-Wosik, Semiconductor Doping and Diffusion, Electrical and Electronics Engineering Encyclopedia, ed. J. Webster, J. Wiley&Sons, Inc., Vol. 19, pp. 17-29, 1999.